to-92mod plastic-encapsulate transistors 2sc2482 transistor (npn) feature z high voltage :vceo=300v z small collector output capacitance: cob=3.0pf(typ) maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage 300 v v ceo collector-emitter voltage 300 v v ebo emitter-base voltage 7 v i c collector current -continuous 0.1 a p c collector power dissipation 0.9 w t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics(t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v(br) cbo i c = 100 a, i e =0 300 v collector-emitter breakdown voltage v(br) ceo i c = 3ma ,i b =0 300 v emitter-base breakdown voltage v(br) ebo i e = 100 a,i c =0 7 v collector cut-off current i cbo v cb = 240 v, i e =0 1.0 a collector cut-off current i ceo v cb = 220 v, i b =0 5.0 a emitter cut-off current i ebo v eb = 7v, i c =0 1.0 a dc current gain h fe v ce =10v, i c =20ma 30 150 collector-emitter saturation voltage v ce(sat) i c = 10ma, i b =1ma 1.0 v base-emitter saturation voltage v be(sat) i c =10ma, i b =1ma 1.0 v transition frequency f t v ce =10v, i c =20ma,f=30mhz 50 mhz collector output capacitance cob v cb =20v, i e =0, f=1mhz 3 pf classification of h fe rank o y range 30-90 90-150 to-92mod 1. emitter 2. collector 3. base 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2012
0.1 1 10 1 10 100 10 20 30 40 0 10 20 30 40 50 60 70 80 0.1 1 10 100 0 100 200 300 0 25 50 75 100 125 150 0.0 0.3 0.6 0.9 1.2 0.01 0.1 1 10 100 0 200 400 600 800 1000 0.01 0.1 1 10 100 0 100 200 300 400 024681012141618 0 10 20 30 40 50 60 f=1mhz i e =0 / i c =0 t a =25 o c 2sc2482 reverse voltage v (v) capacitance c (pf) v cb / v eb c ob / c ib ?? c ib c ob transition frequency f t (mhz) collector current i c (ma) v ce =10v t a =25 o c i c f t ?? v ce = 10v t a =100 o c t a =25 o c collector current i c (ma) dc current gain h fe i c h fe ?? collector power dissipation p c (w) ambient temperature t a ( ) p c ?? t a collector current i c (ma) base-emitter saturation voltage v besat (mv) t a =25 t a =100 =10 i c v besat ?? t a =25 t a =100 =10 v cesat ?? i c collector-emitter saturation voltage v cesat (mv) collector current i c (ma) common emitter t a =25 500ua 450ua 400ua 350ua 300ua 250ua 200ua 150ua 100ua i b =50ua collector-emitter voltage v ce (v) collector current i c (ma) static characteristic 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification b,may,2012
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